Ga-doped indium oxide nanowire phase change random access memory cells
Identifieur interne : 000122 ( Main/Repository ); précédent : 000121; suivant : 000123Ga-doped indium oxide nanowire phase change random access memory cells
Auteurs : RBID : Pascal:14-0050976Descripteurs français
- Pascal (Inist)
English descriptors
- KwdEn :
Abstract
Phase change random access memory (PCRAM) devices are usually constructed using tellurium based compounds, but efforts to seek other materials providing desirable memory characteristics have continued. We have fabricated PCRAM devices using Ga-doped In2O3 nanowires with three different Ga compositions (Ga/(In + Ga) atomic ratio: 2.1%, 11.5% and 13.0%), and investigated their phase switching properties. The nanowires (˜40 nm in diameter) can be repeatedly switched between crystalline and amorphous phases, and Ga concentration-dependent memory switching behavior in the nanowires was observed with ultra-fast set/reset rates of 80 ns/20 ns, which are faster than for other competitive phase change materials. The observations of fast set/reset rates and two distinct states with a difference in resistance of two to three orders of magnitude appear promising for nonvolatile information storage. Moreover, we found that increasing the Ga concentration can reduce the power consumption and resistance drift; however, too high a level of Ga doping may cause difficulty in achieving the phase transition.
Links toward previous steps (curation, corpus...)
- to stream Main, to step Corpus: 000157
Links to Exploration step
Pascal:14-0050976Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Ga-doped indium oxide nanowire phase change random access memory cells</title><author><name>BO JIN</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Division of IT-Convergence Engineering, Pohang University of Science and Technology</s1><s2>Pohang</s2><s3>KOR</s3><sZ>1 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Pohang</wicri:noRegion></affiliation></author><author><name>TAEKYUNG LIM</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Physics, Kyonggi University</s1><s2>Suwon, Gyeonggi-Do, 443-760</s2><s3>KOR</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Suwon, Gyeonggi-Do, 443-760</wicri:noRegion></affiliation></author><author><name>SANGHYUN JU</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Physics, Kyonggi University</s1><s2>Suwon, Gyeonggi-Do, 443-760</s2><s3>KOR</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Suwon, Gyeonggi-Do, 443-760</wicri:noRegion></affiliation></author><author><name sortKey="Latypov, Marat I" uniqKey="Latypov M">Marat I. Latypov</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Material Science and Engineering. Pohang University of Science and Technology</s1><s2>Pohang</s2><s3>KOR</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Department of Material Science and Engineering. Pohang University of Science and Technology</wicri:noRegion></affiliation></author><author><name>HYOUNG SEOP KIM</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Material Science and Engineering. Pohang University of Science and Technology</s1><s2>Pohang</s2><s3>KOR</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Department of Material Science and Engineering. Pohang University of Science and Technology</wicri:noRegion></affiliation></author><author><name sortKey="Meyyappan, M" uniqKey="Meyyappan M">M. Meyyappan</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>NASA Ames Research Center</s1><s2>Moffett Field, CA 94035</s2><s3>USA</s3><sZ>6 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>NASA Ames Research Center</wicri:noRegion></affiliation></author><author><name sortKey="Lee, Jeong Soo" uniqKey="Lee J">Jeong-Soo Lee</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Division of IT-Convergence Engineering, Pohang University of Science and Technology</s1><s2>Pohang</s2><s3>KOR</s3><sZ>1 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Pohang</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">14-0050976</idno><date when="2014">2014</date><idno type="stanalyst">PASCAL 14-0050976 INIST</idno><idno type="RBID">Pascal:14-0050976</idno><idno type="wicri:Area/Main/Corpus">000157</idno><idno type="wicri:Area/Main/Repository">000122</idno></publicationStmt><seriesStmt><idno type="ISSN">0957-4484</idno><title level="j" type="abbreviated">Nanotechnology : (Bristol, Print)</title><title level="j" type="main">Nanotechnology : (Bristol. Print)</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Crystalline phase</term><term>Gallium additions</term><term>Indium additions</term><term>Information storage</term><term>Nanostructured materials</term><term>Nanowires</term><term>PCM material</term><term>Phase transformations</term><term>Phase transitions</term><term>Quantity ratio</term><term>Random-access storage</term><term>Switching</term><term>Tellurium</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Addition gallium</term><term>Addition indium</term><term>Nanofil</term><term>Nanomatériau</term><term>Transformation phase</term><term>Mémoire accès direct</term><term>Tellure</term><term>Commutation</term><term>Phase cristalline</term><term>Effet concentration</term><term>Matériau PCM</term><term>Stockage information</term><term>Transition phase</term><term>In2O3</term><term>8107V</term><term>8107B</term><term>6470N</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Phase change random access memory (PCRAM) devices are usually constructed using tellurium based compounds, but efforts to seek other materials providing desirable memory characteristics have continued. We have fabricated PCRAM devices using Ga-doped In<sub>2</sub>O<sub>3</sub> nanowires with three different Ga compositions (Ga/(In + Ga) atomic ratio: 2.1%, 11.5% and 13.0%), and investigated their phase switching properties. The nanowires (˜40 nm in diameter) can be repeatedly switched between crystalline and amorphous phases, and Ga concentration-dependent memory switching behavior in the nanowires was observed with ultra-fast set/reset rates of 80 ns/20 ns, which are faster than for other competitive phase change materials. The observations of fast set/reset rates and two distinct states with a difference in resistance of two to three orders of magnitude appear promising for nonvolatile information storage. Moreover, we found that increasing the Ga concentration can reduce the power consumption and resistance drift; however, too high a level of Ga doping may cause difficulty in achieving the phase transition.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0957-4484</s0></fA01><fA03 i2="1"><s0>Nanotechnology : (Bristol, Print)</s0></fA03><fA05><s2>25</s2></fA05><fA06><s2>5</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Ga-doped indium oxide nanowire phase change random access memory cells</s1></fA08><fA11 i1="01" i2="1"><s1>BO JIN</s1></fA11><fA11 i1="02" i2="1"><s1>TAEKYUNG LIM</s1></fA11><fA11 i1="03" i2="1"><s1>SANGHYUN JU</s1></fA11><fA11 i1="04" i2="1"><s1>LATYPOV (Marat I.)</s1></fA11><fA11 i1="05" i2="1"><s1>HYOUNG SEOP KIM</s1></fA11><fA11 i1="06" i2="1"><s1>MEYYAPPAN (M.)</s1></fA11><fA11 i1="07" i2="1"><s1>LEE (Jeong-Soo)</s1></fA11><fA14 i1="01"><s1>Division of IT-Convergence Engineering, Pohang University of Science and Technology</s1><s2>Pohang</s2><s3>KOR</s3><sZ>1 aut.</sZ><sZ>7 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Physics, Kyonggi University</s1><s2>Suwon, Gyeonggi-Do, 443-760</s2><s3>KOR</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="03"><s1>Department of Material Science and Engineering. Pohang University of Science and Technology</s1><s2>Pohang</s2><s3>KOR</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="04"><s1>NASA Ames Research Center</s1><s2>Moffett Field, CA 94035</s2><s3>USA</s3><sZ>6 aut.</sZ></fA14><fA20><s2>055205.1-055205.7</s2></fA20><fA21><s1>2014</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>22480</s2><s5>354000501685830070</s5></fA43><fA44><s0>0000</s0><s1>© 2014 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>40 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>14-0050976</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Nanotechnology : (Bristol. Print)</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>Phase change random access memory (PCRAM) devices are usually constructed using tellurium based compounds, but efforts to seek other materials providing desirable memory characteristics have continued. We have fabricated PCRAM devices using Ga-doped In<sub>2</sub>O<sub>3</sub> nanowires with three different Ga compositions (Ga/(In + Ga) atomic ratio: 2.1%, 11.5% and 13.0%), and investigated their phase switching properties. The nanowires (˜40 nm in diameter) can be repeatedly switched between crystalline and amorphous phases, and Ga concentration-dependent memory switching behavior in the nanowires was observed with ultra-fast set/reset rates of 80 ns/20 ns, which are faster than for other competitive phase change materials. The observations of fast set/reset rates and two distinct states with a difference in resistance of two to three orders of magnitude appear promising for nonvolatile information storage. Moreover, we found that increasing the Ga concentration can reduce the power consumption and resistance drift; however, too high a level of Ga doping may cause difficulty in achieving the phase transition.</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A07V</s0></fC02><fC02 i1="02" i2="3"><s0>001B80A07B</s0></fC02><fC02 i1="03" i2="3"><s0>001B60D70N</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Addition gallium</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Gallium additions</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Addition indium</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Indium additions</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Nanofil</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Nanowires</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Nanomatériau</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Nanostructured materials</s0><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Transformation phase</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Phase transformations</s0><s5>05</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Mémoire accès direct</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Random-access storage</s0><s5>06</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Tellure</s0><s2>NC</s2><s5>07</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Tellurium</s0><s2>NC</s2><s5>07</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Commutation</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Switching</s0><s5>08</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Phase cristalline</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Crystalline phase</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Fase cristalina</s0><s5>09</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Effet concentration</s0><s5>10</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Quantity ratio</s0><s5>10</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Matériau PCM</s0><s5>11</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>PCM material</s0><s5>11</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Stockage information</s0><s5>12</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Information storage</s0><s5>12</s5></fC03><fC03 i1="13" i2="X" l="FRE"><s0>Transition phase</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="ENG"><s0>Phase transitions</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="SPA"><s0>Transición fase</s0><s5>13</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>In2O3</s0><s4>INC</s4><s5>46</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>8107V</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>8107B</s0><s4>INC</s4><s5>72</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>6470N</s0><s4>INC</s4><s5>73</s5></fC03><fN21><s1>062</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=IndiumV3/Data/Main/Repository
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 000122 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 000122 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= *** parameter Area/wikiCode missing ***
|area= IndiumV3
|flux= Main
|étape= Repository
|type= RBID
|clé= Pascal:14-0050976
|texte= Ga-doped indium oxide nanowire phase change random access memory cells
}}
| This area was generated with Dilib version V0.5.77. |  |